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TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates

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A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.

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Correspondence to David J. Smith.

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Kim, J.J., Jacobs, R.N., Almeida, L.A. et al. TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates. J. Electron. Mater. 42, 3142–3147 (2013). https://doi.org/10.1007/s11664-013-2688-7

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  • DOI: https://doi.org/10.1007/s11664-013-2688-7

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