Paper 13046-46
Paper 13046-46
High-performance VLWIR MBE HgCdTe photoconductive detectors
24 April 2024 • 3:50 PM - 4:10 PM EDT | National Harbor 2
Abstract
Bulk grown wafers had been used for fabricating photoconductive (PC) HgCdTe detectors for several decades until recent years. As bulk wafers are getting gradually depleted over years, epitaxial grown HgCdTe wafers are becoming the only choices available. This paper reports the very long wavelength Infrared (VLWIR) PC HgCdTe detector development (cutoff wavelength ~ 17μm at LN2) at Teledyne, leveraging the state-of-the-art molecular beam epitaxy (MBE) material technology on CdZnTe substrates. These MBE wafers provide much larger wafer sizes, better uniformity, and in general better detector performance than conventional bulk wafers. Detailed detector performance comparison was performed between MBE and bulk wafers on detectivity (D*), responsivity, spectral response, etc. for 1mm and 0.25mm discrete detectors. The VLWIR MBE PC HgCdTe detectors are now in volume production at Teledyne.
Presenter
Teledyne Judson Technologies (United States)
Dr. Henry Yuan is Director of Product Development at Teledyne Judson Technologies (TJT). He is responsible for new product development, product improvement, advanced detector technology R&D and custom programs at TJT. Dr. Yuan has been with TJT since 1996 and has extensive experience and knowledge in IR detector and materials. He was instrumental in the development of various IR detector materials, including InGaAs (lattice matched and extended wavelength), PV and PC HgCdTe, InSb, InAs, Ge, and SLS, from detector design, fabrication, characterization, to production. Dr. Yuan led TJT’s Focal Plane Array (FPA) development efforts, especially in large format small pixel InGaAs 2D array development and programs.